Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 3.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 165mW @VGS = 3V. RDS(ON) = 130mW @VGS = 5V.

文件：795.1 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 10A, RDS(ON) = 120mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 130mW @VGS = 5V. RDS(ON) = 165mW @VGS = 3V.

文件：1.029839 Mbytes 页数：6 Pages

CET-MOS

华瑞

XLamp® CHA0410 LED

FEATURES • 4.2‑mm optical source • Available in 80-, 90‑ and 95‑minimum CRI options • EasyWhite® 2- and 3‑step binning • Premium Color 2- and 3-step binning • Forward voltage options: 12‑V class & 36‑V class • 85 °C binning and characterization • Maximum drive current: 900 mA (12 V), 300

文件：1.35567 Mbytes 页数：25 Pages

CREELED

XLamp® CHA0410 Pro9™ LED

FEATURES • 4.2‑mm optical source • Available in 90 and 95 CRI minimum options • EasyWhite® 2- and 3‑step binning • Premium Color 3-step binning • Forward voltage options: 12‑V class & 36‑V class • 85 °C binning and characterization • Maximum drive current: 900 mA (12 V), 300 mA (36 V) • 11

文件：1.16192 Mbytes 页数：23 Pages

CREELED