Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 5A, RDS(ON) = 465mΩ @VGS = 4.5V. RDS(ON) = 60mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：502 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

Feature ● 20V/, 6A, RDS(ON) = 30mΩ(MAX) @VGS = 4.5V. RDS(ON) = 40mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package.

文件：505.03 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode MOSFET

Feature ● 20V/6A, RDS(ON) = 33mΩ(MAX) @VGS = 4.5V. RDS(ON) = 50mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package. Applications ● LI-ION Protection Circuit

文件：382.35 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 7A, RDS(ON) = 25mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：590.19 Kbytes 页数：5 Pages

CET-MOS

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 6A, RDS(ON) = 27mW @VGS = 4.5V. RDS(ON) = 40mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：603.12 Kbytes 页数：4 Pages

CET-MOS

华瑞

丝印：9926；Package：SOP-8；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

文件：350.97 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：9926；Package：SOP-8；Dual N-Channel Enhancement Mode Field Effect Transistor

Features VDS (V) = 20V ID = 7A RDS(ON)

文件：1.00679 Mbytes 页数：5 Pages

UMW

友台半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 6.0A, RDS(ON) = 36mW @VGS = 10V. RDS(ON) = 42mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RDS(ON) = 75mW @VGS = 2.5V. Lead free product is acquired.

文件：889.37 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ■ -30V, -3.5A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 160mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability.

文件：134.93 Kbytes 页数：7 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 3.3A, RDS(ON) = 100mΩ @VGS = 10V. RDS(ON) = 200mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

文件：501.75 Kbytes 页数：5 Pages

CET

华瑞