CEM9947

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■-20V,-3.5A,RDS(ON)=100mΩ@VGS=-10V. -1A,RDS(ON)=190mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM9952A

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■30V,3.7A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CEM9953A

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■-30V,-2.9A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM9953A

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.5A,RDS(ON)=80mW@VGS=-10V. RDS(ON)=130mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM9955

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●50V,3A,RDS(ON)=130mΩ@VGS=10V.RDS(ON)=200mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CEM9956A

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●30V,3.7A,RDS(ON)=80mΩ@VGS=10V.RDS(ON)=110mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CEM9956A

Dual N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100UISTested •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SetTopBox •LowCurrentDC/DC

CEM8206

双N沟道增强型场效应晶体管

CEM0410

N-Channel MOSFET uses advanced trench technology

CEM-04D

Electret Condenser Microphone(Omnidirectional)