P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V , -4.3A , RDS(ON)=90mΩ @VGS=-4.5V. RDS(ON)=140mΩ @VGS=-2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

文件：501.66 Kbytes 页数：5 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. ■ -30V, -6A, RDS(ON) = 38mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Le

文件：176.94 Kbytes 页数：7 Pages

CET

华瑞

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -4A, RDS(ON) = 65mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：498.56 Kbytes 页数：5 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ● 30V, 5.3A, RDS(ON) = 35m Ω @ VGS = 10V. RDS(ON) = 50m Ω @ VGS = 4.5V. -30V, -4.0A, RDS(ON) = 65m Ω @ VGS = -10V. RDS(ON) = 100m Ω @ VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handin

文件：835.36 Kbytes 页数：9 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ■ -30V, -4.8A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabili

文件：427.18 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V, 6.8A, RDS(ON) = 28mW @VGS = 10V. FEATURES RDS(ON) = 42mW @VGS = 4.5V. -30V, -5.4A, RDS(ON) = 45mW @VGS = -10V. RDS(ON) = 80mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：834.82 Kbytes 页数：7 Pages

CET-MOS

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V, 6.8A, RDS(ON) = 28mW @VGS = 10V. FEATURES RDS(ON) = 42mW @VGS = 4.5V. -30V, -4.5A, RDS(ON) = 65mW @VGS = -10V. RDS(ON) = 95mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：934.92 Kbytes 页数：7 Pages

CET-MOS

华瑞

N&P-Channel Complementary MOSFET

General Features «+ N-Channel © Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V «High Power and current handing capabilly «Lead ree products acquired « Surace Mount Package Application

文件：4.05906 Mbytes 页数：10 Pages

TECHPUBLIC

台舟电子

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. ■ -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability.

文件：544.56 Kbytes 页数：7 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 8A, RDS(ON) = 20mW @VGS = 4.5V. RDS(ON) = 28mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：475.97 Kbytes 页数：4 Pages

CET-MOS

华瑞