Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -4A, RDS(ON) = 65mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：498.56 Kbytes 页数：5 Pages

CET

华瑞

Dual P-Channel Enhancement Mode MOSFET

CET

华瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

文件：239.92 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件：331.49 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Isolated Delta-Sigma Modulator for Current Shunt Measurement

KEY FEATURES • Low voltage differential input • ±62.5 mV and ±250 mV options • Modulator clock options • External clock up to 25 MHz (Si8941) • 10 MHz internal clock (Si8946) • 20 MHz internal clock (Si8947) • Typical input offset: ±50 μV • Typical gain error: ±0.05 • Excellent drift spe

文件：776.56 Kbytes 页数：32 Pages

SKYWORKS

思佳讯