P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V , -4.3A , RDS(ON)=90mΩ @VGS=-4.5V. RDS(ON)=140mΩ @VGS=-2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

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CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 4.6 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switchi

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CHENMKO

力勤

General-Purpose Switching Device Applications

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SANYO

三洋

CW LASER DIODES

CW LASER DIODES High optical power from a single chip FEATURES ● High optical power & high radiant flux density(CW) L8933 series : 0.5 W / 50 µm L8446 series : 1 W / 100 µm L8763 series : 1 W / 50 µm L8828 series : 2 W / 100 µm ● High stability ● Long life ● Compact

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HAMAMATSUHamamatsu Photonics Co.,Ltd.

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