CEM8933

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-4.3A,RDS(ON)=90mΩ@VGS=-4.5V. RDS(ON)=140mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfaceMountPackage.

8933

50VCERAMICDISC

ACT8933

AdvancedPMUforCoreLogicLUCY

ACT8933

AdvancedPMUforCoreLogicLUCY

CHM8933AJPT

DualP-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT4.6Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

EN8933A

General-PurposeSwitchingDeviceApplications

L8933

CWLASERDIODES

CWLASERDIODES Highopticalpowerfromasinglechip FEATURES ●Highopticalpower&highradiantfluxdensity(CW) L8933series:0.5W/50µm L8446series:1W/100µm L8763series:1W/50µm L8828series:2W/100µm ●Highstability ●Longlife ●Compact

PD8933

InGaAsAVALANCHEPHOTODIODES

DESCRIPTION PD8XX3seriesareInGaAsavalanchephotodiodewhichhasasensitiveareaofφ35µm,PD8XX3issuitableforreceivingthelighthavingawavelengthbandof1000to1600nm.Thisphotodiodefeatureslownoise,ahighquantumefficiencyandahighspeedresponseissuitableforthelight

SGM8933

Rail-to-RailOutputOperationalAmplifiers

TDA8933

Class-Daudioamplifier

Generaldescription TheTDA8933isahighefficiencyclass-Damplifierwithlowpowerdissipation.Thecontinuoustimeoutputpoweris2×10Winastereohalfbridgeapplication(RL=8Ω)or1×20Winamonofullbridgeapplication(RL=16Ω).Duetothelowpowerdissipationthedeviceca