CEM8958

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ●30V,5.3A,RDS(ON)=35mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. -30V,-4.0A,RDS(ON)=65mΩ@VGS=-10V. RDS(ON)=100mΩ@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandin

CEM8958

P-Chanel and N-Channel MOSFET use advanced trench technology

CEM8958A

Dual Enhancement Mode Field Effect Transistor

FEATURES ■30V,6.8A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. ■-30V,-4.8A,RDS(ON)=58mΩ@VGS=-10V. RDS(ON)=85mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili

CEM8958A

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-5.4A,RDS(ON)=45mW@VGS=-10V. RDS(ON)=80mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM8958B

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-4.5A,RDS(ON)=65mW@VGS=-10V. RDS(ON)=95mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CHM8958JPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT7Ampere P-channel:VOLTAGE30VoltsCURRENT5.2Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomoto

FDS8958

NP-ChannelMOSFET

Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON)

FDS8958

DualN&P-ChannelPowerTrenchMOSFET

FDS8958A

DualN&P-ChannelPowerTrenchOMOSFET

FDS8958A

DualNandP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateressitanceandyetmaintainsuperiorswitchingperformance. F