CEM8958B

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V,6.8A,RDS(ON)=28mW@VGS=10V. FEATURES RDS(ON)=42mW@VGS=4.5V. -30V,-4.5A,RDS(ON)=65mW@VGS=-10V. RDS(ON)=95mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CHM8958JPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT7Ampere P-channel:VOLTAGE30VoltsCURRENT5.2Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomoto

FDS8958

NP-ChannelMOSFET

Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON)

FDS8958

DualN&P-ChannelPowerTrenchMOSFET

FDS8958A

DualN&P-ChannelPowerTrenchOMOSFET

FDS8958A

DualNandP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateressitanceandyetmaintainsuperiorswitchingperformance. F

FDS8958A

NP-ChannelMOSFET

Features N-Channel VDS(V)=30V ID=7A(VGS=10V) RDS(ON)

FDS8958A

DualN&P-ChannelPowerTrenchMOSFET

FDS8958B

DualN&P-ChannelPowerTrench짰MOSFETQ1-N-Channel:30V,6.4A,26m廓Q2-P-Channel:-30V,-4.5A,51m廓

KDS8958

DualN&P-ChannelPowerTrenchMOSFET