Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 7 Ampere P-channel: VOLTAGE 30 Volts CURRENT 5.2 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo moto

文件：551.26 Kbytes 页数：5 Pages

CHENMKO

力勤

Dual Enhancement Mode Field Effect Transistor

Chenmko

力勤

Dual N and P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. F

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FAIRCHILD

仙童半导体

High output power: 1.5 mW,pigtail type

Laser diode High output power: 1.5 mW, pigtail type Features ● High output power: 1.5 mW ● High-speed response: 1.25 Gbps Max. ● 1.3 µm FP (Fabry-perot) laser Applications ● Optical fiber communications

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HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo

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FAIRCHILD

仙童半导体