Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 7 Ampere P-channel: VOLTAGE 30 Volts CURRENT 5.2 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo moto

文件：551.26 Kbytes 页数：5 Pages

CHENMKO

力勤

Dual Enhancement Mode Field Effect Transistor

Chenmko

力勤

Dual N & P-Channel PowerTrench MOSFET

文件：233.48 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

NP-Channel MOSFET

Features N-Channel VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON)

文件：587.09 Kbytes 页数：9 Pages

UMW

友台半导体

Dual N and P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. F

文件：362.45 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体