COM Express Type 10 Mini Module with Intel® Atom® E3800 Family

Features ● Intel® Atom® processor (Bay Trail) ● Onboard DDR3L up to 4GB ● Max. up to 4 lanes of PCIe ● 2 SATA-300 ● 8 USB 2.0 and 1 USB 3.0

文件：349.72 Kbytes 页数：2 Pages

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艾讯科技

COM Express Type 10 Mini Module with Intel® Atom® E3800 Family

Features ● Intel® Atom® processor (Bay Trail) ● Onboard DDR3L up to 4GB ● Max. up to 4 lanes of PCIe ● 2 SATA-300 ● 8 USB 2.0 and 1 USB 3.0

文件：349.72 Kbytes 页数：2 Pages

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COM Express Type 10 Mini Application Board with LVDS, VGA, Dual LAN and Audio

Features ● 84 x 55 mini size form factor ● 2 GbE LAN ● SATA and mSATA ● LVDS and VGA ● 6 USB 2.0 ● 2 PCI Express Mini Card slots

文件：475.97 Kbytes 页数：1 Pages

AXIOMTEK

艾讯科技

COM Express Type 10 Mini Module with Intel® Atom® E3800 Family

Features ● Intel® Atom® processor (Bay Trail) ● Onboard DDR3L up to 4GB ● Max. up to 4 lanes of PCIe ● 2 SATA-300 ● 8 USB 2.0 and 1 USB 3.0

文件：349.72 Kbytes 页数：2 Pages

AXIOMTEK

艾讯科技

COM Express Type 10 Mini Application Board with LVDS, VGA, Dual LAN and Audio

Features ● 84 x 55 mini size form factor ● 2 GbE LAN ● SATA and mSATA ● LVDS and VGA ● 6 USB 2.0 ● 2 PCI Express Mini Card slots

文件：475.97 Kbytes 页数：1 Pages

AXIOMTEK

艾讯科技

COM Express Type 10 Mini Module with Intel® Atom® E3800 Family

Features ● Intel® Atom® processor (Bay Trail) ● Onboard DDR3L up to 4GB ● Max. up to 4 lanes of PCIe ● 2 SATA-300 ● 8 USB 2.0 and 1 USB 3.0

文件：349.72 Kbytes 页数：2 Pages

AXIOMTEK

艾讯科技

COM Express Type 10 Mini Application Board with LVDS, VGA, Dual LAN and Audio

Features ● 84 x 55 mini size form factor ● 2 GbE LAN ● SATA and mSATA ● LVDS and VGA ● 6 USB 2.0 ● 2 PCI Express Mini Card slots

文件：475.97 Kbytes 页数：1 Pages

AXIOMTEK

艾讯科技

COM Express Type 10 Mini Module with Intel® Atom® E3800 Family

Features ● Intel® Atom® processor (Bay Trail) ● Onboard DDR3L up to 4GB ● Max. up to 4 lanes of PCIe ● 2 SATA-300 ● 8 USB 2.0 and 1 USB 3.0

文件：349.72 Kbytes 页数：2 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 16A, RDS(ON) = 6.2mΩ @VGS = 10V. RDS(ON) = 9 mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：405.72 Kbytes 页数：4 Pages

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华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：503.33 Kbytes 页数：5 Pages

CET

华瑞