N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 8A, RDS(ON) = 26mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：619.3 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 8A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：408.17 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 8.1A, RDS(ON) = 21mW @VGS = 10V. RDS(ON) = 28mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：636.87 Kbytes 页数：5 Pages

CET-MOS

华瑞

Dual N-Channel Advanced Power MOSFET

Features  VDS= 60V, ID= 9 A RDS(ON)

文件：1.37125 Mbytes 页数：5 Pages

Bychip

百域芯

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 7.3A, RDS(ON) = 26mW @VGS = 10V. RDS(ON) = 35mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：414.23 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 7.4A, RDS(ON) = 23mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 31mW @VGS = 4.5V.

文件：520.909 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 2.6A, RDS(ON) = 230mΩ @VGS = 10V. RDS(ON) = 270mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：411.76 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 6A, RDS(ON) = 43mW @VGS = 10V. RDS(ON) = 49mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：423.28 Kbytes 页数：5 Pages

CET-MOS

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 5.3A, RDS(ON) = 44mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 51mW @VGS = 4.5V.

文件：517.26 Kbytes 页数：5 Pages

CET-MOS

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

60V, 5.2A, RDS(ON) = 46mW @VGS = 10V. FEATURES RDS(ON) = 52mW @VGS = 4.5V. -60V, -3.6A, RDS(ON) = 95mW @VGS = -10V. RDS(ON) = 110mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：426.37 Kbytes 页数：7 Pages

CET-MOS

华瑞