CEM6369

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

60V,5.2A,RDS(ON)=46mW@VGS=10V. FEATURES RDS(ON)=52mW@VGS=4.5V. -60V,-3.6A,RDS(ON)=95mW@VGS=-10V. RDS(ON)=110mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM6405

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-5.7A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=68mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM6407

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-5.1A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=68mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM6426

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,4.7A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM6426

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,4.7A,RDS(ON)=66mW@VGS=10V. RDS(ON)=85mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM6428

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,4.1A,RDS(ON)=68mΩ@VGS=10V. RDS(ON)=86mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CEM6428

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,4.1A,RDS(ON)=68mW@VGS=10V. RDS(ON)=86mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM6428-TP

Dual N-ChannelEnhancement Mode Power MOSFET

GENERALFEATURES *Vos=B0VIo=6A +Rosin

CEM6589

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

60V,4.5A,RDS(ON)=55mW@VGS=10V. FEATURES RDS(ON)=72mW@VGS=4.5V. -60V,-3.1A,RDS(ON)=130mW@VGS=-10V. RDS(ON)=170mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM6600

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,4A,RDS(ON)=76mW@VGS=10V. RDS(ON)=100mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.