Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 5.3A, RDS(ON) = 44mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 51mW @VGS = 4.5V.

文件：517.26 Kbytes 页数：5 Pages

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SOT23, Low-Power μP Supervisory Circuits with Battery Backup and Chip-Enable Gating

文件：175.81 Kbytes 页数：15 Pages

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