N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 6A, RDS(ON) = 43mW @VGS = 10V. RDS(ON) = 49mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：423.28 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 20.7A, RDS(ON) = 45mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 52mW @VGS = 4.5V.

文件：436.45 Kbytes 页数：5 Pages

CET-MOS

华瑞

17.7 - 19.7GHz Power Amplifier

文件：1.05448 Mbytes 页数：16 Pages

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Fully Automatic Dicing Saw

文件：219.72 Kbytes 页数：2 Pages

DISCO

迪斯科公司