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CEU6362

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,20.7A,RDS(ON)=45mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=52mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

6362

Component12X1PAIR

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE

6362

SBE®320/SBX®350ConnectorsUpto550Amps

SBE®andSBX®connectorscanintegrateupto8auxiliarypower /signalcontactsalongwiththetwoprimarypowercircuits. Sequencingwithinauxiliarypositionsispossibleusingthe4pin lengthsavailableinthe1x4auxiliaryconnector.SBE®andSBX® offertouchsafehousings. •SilverPla

APP

Anderson Power Products, Inc.

APP

6362-C

438PCBBarrierTerminalStrip,600V

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

6362-M

438PCBBarrierTerminalStrip,600V

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

6362-V

438PCBBarrierTerminalStrip,600V

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

AN6362

VTRCOLORAFCCIRCUIT

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

AN6362S

VTRCOLORAFCCIRCUIT

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

AON6362

30VN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

CEA6362

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,5.2A,RDS(ON)=46mW@VGS=10V. RDS(ON)=52mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CED6362

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,20.7A,RDS(ON)=45mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=52mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CEM6362

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,6A,RDS(ON)=43mW@VGS=10V. RDS(ON)=49mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CHA6362-QXG

17.7-19.7GHzPowerAmplifier

UMSUnited Monolithic Semiconductors

United Monolithic Semiconductors

UMS

DFD6362

FullyAutomaticDicingSaw

DISCODISCO Corporation

迪斯科公司

DISCO

E6362

SBE®320/SBX®350ConnectorsUpto550Amps

SBE®andSBX®connectorscanintegrateupto8auxiliarypower /signalcontactsalongwiththetwoprimarypowercircuits. Sequencingwithinauxiliarypositionsispossibleusingthe4pin lengthsavailableinthe1x4auxiliaryconnector.SBE®andSBX® offertouchsafehousings. •SilverPla

APP

Anderson Power Products, Inc.

APP

EN6362QI

DC-DCBuckwithIntegratedInductor

AlteraAltera Corporation

阿尔特阿尔特拉公司

Altera

EPE6362G

10Base-TInterfaceModulewithEnhancedCommonModeAttenuation

PCA

PCA Electronics, Inc.

PCA

HL6362MG

LowOperatingCurrentVisibleLaserDiode

Description TheHL6362MG/63MGare0.63µmbandAlGaInPlaserdiodeswithamulti-quantumwell(MQW)structure.Theyare suitableaslightsourcesforlaserdisplay,laserscannersandopticalequipmentformeasurement. Features •Visiblelightoutput:640nmTyp •Singlelongitudinalmode

OPNEXTOpnext. Inc.

Opnext. Inc.

OPNEXT

L6362

FullyintegrateddevicetransceiverIC

Description TheL6362isamonolithicdualpushpullTransceiverfullycomplianttoPHY2(3wires)supportingCOM1(4.8kbaud),COM2(38.4kbaud)andCOM3(230.4kbaud)modes.C/QandI/Qoutputstagesareprogrammable:high-side,low-sideorpush-pull;alsocut-offcurrentandcutoffcurrentd

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

L6362A

IO-LinkcommunicationtransceiverdeviceIC

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
供应商型号品牌批号封装库存备注价格
CET
22+
TO252
50000
一级代理,放心购买!
询价
CET
2022
TO252
2058
原厂原装正品,价格超越代理
询价
CET
23+
TO252
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
CET
03+
TO252
273
询价
MEMO
2017+
TO-252
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
CET
23+
TO252
8000
全新原装现货,欢迎来电咨询
询价
SR
23+
TO-252
5000
原装正品,假一罚十
询价
SOT-252
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
CET
23+
TO-252
90000
进口原装现货假一罚十价格合理
询价
23+
N/A
36400
正品授权货源可靠
询价
更多CEU6362供应商 更新时间2024-4-27 9:02:00