CEM6188

Dual N-Channel Advanced Power MOSFET

Features VDS=60V,ID=9A RDS(ON)

CEM6188

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,7.3A,RDS(ON)=26mW@VGS=10V. RDS(ON)=35mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CEM6188

N-Channel MOSFET uses advanced trench technology

CEM6188A

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,7.4A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=31mW@VGS=4.5V.

DAML6188

GaAsFETLowNoiseAmplifier

FP6188

2A,23V,340KHzSynchronousStep-DownConverter

PE6188

MediumPower50WattsRFLoadUpTo4GHzWithNMale

PE6188

50WattRFLoadUpto4GHzWithNMaleInputSquareBodyBlackAnodizedAluminumHeatsink

SG-BGA-6188

Ballguidepreventsovercompressionofelastomer