Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 7.3A, RDS(ON) = 26mW @VGS = 10V. RDS(ON) = 35mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：414.23 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Advanced Power MOSFET

Features  VDS= 60V, ID= 9 A RDS(ON)

文件：1.37125 Mbytes 页数：5 Pages

Bychip

百域芯

N-Channel MOSFET uses advanced trench technology

文件：1.53941 Mbytes 页数：5 Pages

DOINGTER

杜因特

N Channel MOSFET

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 7.4A, RDS(ON) = 23mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 31mW @VGS = 4.5V.

文件：520.909 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞