N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 12.5A, RDS(ON) = 10mW @VGS = 10V. RDS(ON) = 14mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：424.06 Kbytes 页数：5 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V, 10.4A, RDS(ON) = 11.6mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications DC-DC converters. Synchronous rectification.

文件：709.16 Kbytes 页数：6 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. ■ -60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabi

文件：467.65 Kbytes 页数：7 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 12A, RDS(ON) = 11.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：635.49 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 12A, RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：412.89 Kbytes 页数：4 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 9.5A, RDS(ON) = 12.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

文件：404.86 Kbytes 页数：4 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 9.5A, RDS(ON) = 12.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：620.03 Kbytes 页数：4 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 9.0A, RDS(ON) = 14.5mW @VGS = 10V. RDS(ON) = 18.0mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：620.3 Kbytes 页数：4 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 9.0A, RDS(ON) = 14.5mW @VGS = 10V. RDS(ON) = 18.0mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

文件：404.93 Kbytes 页数：4 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -2.7A, RDS(ON) = 170mW @VGS = -10V. RDS(ON) = 225mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：372.72 Kbytes 页数：5 Pages

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