N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 12.5A, RDS(ON) = 10mW @VGS = 10V. RDS(ON) = 14mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：424.06 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 50A, RDS(ON) = 8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 11mW @VGS = 4.5V.

文件：437.21 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 45A, RDS(ON) = 8.5mW @VGS = 10V. RDS(ON) = 12mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：995.75 Kbytes 页数：6 Pages

CET-MOS

华瑞

SIL2 Multifunction Temperature Converter

FEATURES SIL 2 / SC 3 Installation in Zone 2 (pending) Installation in Div. 2 mV, TC, 2/3/4wire res./RTD or potentiometer input Duplication/inversion/scaling/custom output Selectable CJC: internal PT1000, external RTD or fixed Fastest integration time: 50 ms Burnout/internal/cjc/in sensor

文件：215.91 Kbytes 页数：2 Pages

GMI