N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 12.5A, RDS(ON) = 10mW @VGS = 10V. RDS(ON) = 14mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：424.06 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

85 Amp Stud Mount Rectifiers

Description: The NTE6070 thru NTE6079 series of 85 Amp power rectifiers are stud mounted DO–5 packages. Because the silicon junction is carefully fitted within a glass to–metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental

文件：19.05 Kbytes 页数：2 Pages

NTE

LOW-POWER ADSL DIFFERENTIAL RECEIVER

文件：385.95 Kbytes 页数：24 Pages

TI

德州仪器

LOW-POWER ADSL DIFFERENTIAL RECEIVER

文件：385.95 Kbytes 页数：24 Pages

TI

德州仪器