Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 9.0A, RDS(ON) = 14.5mW @VGS = 10V. RDS(ON) = 18.0mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

文件：404.93 Kbytes 页数：4 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 9.0A, RDS(ON) = 14.5mW @VGS = 10V. RDS(ON) = 18.0mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：620.3 Kbytes 页数：4 Pages

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凌力尔特