N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 12A, RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：412.89 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

Silicon Dual Schottky Rectifier

Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: 20 Amps Total (10 Amps Pre Diode Leg) Guarding for Stress Protection Low Forward Voltage +150°C Operating

文件：18.46 Kbytes 页数：2 Pages

NTE

1.5A Low Dropout Positive Regulator

文件：514.58 Kbytes 页数：7 Pages

SSC

Silicon Standard Corp.

ADSL Input/Output Transformer

文件：36.52 Kbytes 页数：1 Pages

FILTRAN

费尔兰特