丝印：C3M0160120J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Low impedance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr

文件：1.05638 Mbytes 页数：10 Pages

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丝印：C3M0280090；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Incre

文件：985.63 Kbytes 页数：11 Pages

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丝印：C3M0350120D；Package：TO-247-3；C3M0350120D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Inc

文件：729.77 Kbytes 页数：10 Pages

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丝印：C3M0350120J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Low impedance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr

文件：916.58 Kbytes 页数：10 Pages

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丝印：C3M0900170D；Package：TO-247-3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V...18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Ha

文件：4.69333 Mbytes 页数：13 Pages

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丝印：C3M0900170J；Package：TO-263-7L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V..18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal

文件：1.10312 Mbytes 页数：13 Pages

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丝印：C3M0900170M；Package：TO-3PF3L；1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Fully isolated package for simplified assembly • High-speed switching with low capacitances • High blocking voltage with low RDS(on) • 12V..18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Halogen free, RoHS compliant Typical Application

文件：882.94 Kbytes 页数：11 Pages

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丝印：C3M0015065D；Package：TO-243-3；Silicon Carbide Power MOSFET

文件：1.26978 Mbytes 页数：11 Pages

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丝印：C3M0015065K；Package：TO-247-3；Silicon Carbide Power MOSFET

文件：1.26893 Mbytes 页数：11 Pages

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丝印：C3M0016120D；Package：TO247-3；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：933.85 Kbytes 页数：11 Pages

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