丝印：C3M；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Wideband response : fu = 2.8 GHz TYP. @ 3 dB bandwidth • Low current : ICC = 24.5 mA TYP. • Medium output power : PO (sat) = +15.5 dBm TYP. @ f = 0.95GHz : PO (sat) = +12.5 dBm TYP. @ f = 2.15 GHz • High linearity : PO (1dB) = +9.0 dBm TYP. @ f = 0.95 GHz : PO (1dB) = +7.0 dBm TYP

文件：377.22 Kbytes 页数：19 Pages

RENESAS

瑞萨

丝印：C3M；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Wideband response : fu = 2.8 GHz TYP. @ 3 dB bandwidth • Low current : ICC = 24.5 mA TYP. • Medium output power : PO (sat) = +15.5 dBm TYP. @ f = 0.95GHz : PO (sat) = +12.5 dBm TYP. @ f = 2.15 GHz • High linearity : PO (1dB) = +9.0 dBm TYP. @ f = 0.95 GHz : PO (1dB) = +7.0 dBm TYP

文件：377.22 Kbytes 页数：19 Pages

RENESAS

瑞萨

丝印：C3M0015065D；Package：TO-247-3；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件：1.06874 Mbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0015065K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.14336 Mbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0016120D；Package：TO247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • H

文件：932.98 Kbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0016120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.06209 Mbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0021120D；Package：TO247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • H

文件：807.87 Kbytes 页数：10 Pages

WOLFSPEED

丝印：C3M0021120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：664.49 Kbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0025065D；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件：1.01615 Mbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0025065J1；Package：TO-263-7LXL；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • R

文件：1.0347 Mbytes 页数：11 Pages

WOLFSPEED