丝印：C3M0025065D；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件：1.01615 Mbytes 页数：11 Pages

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丝印：C3M0025065J1；Package：TO-263-7LXL；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • R

文件：1.0347 Mbytes 页数：11 Pages

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SiC N-Channel MOSFET

FEATURES ·Optimized Package with Separate Driver Source Pin ·High Bloking Voltage with Low On-Resistance ·High-Speed Swicthing with Low Capability APPLICATIONS ·Solar Inverters ·EV Battery Charges ·High Voltage DC/DC Converters ·Energy Storage Systems

文件：326.27 Kbytes 页数：3 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID=97A@ TC=25℃ Drain Source Voltage -VDSS=650V(Min) Static Drain-Source On-Resistance -RDS(on) = 34mΩ(Max)@VGS= 15V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：412.67 Kbytes 页数：3 Pages

ISC

无锡固电

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：361.55 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：C3M0025065K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.15453 Mbytes 页数：13 Pages

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Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits •

文件：1.09545 Mbytes 页数：13 Pages

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丝印：C3M0025065L；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits •

文件：1.09545 Mbytes 页数：13 Pages

WOLFSPEED

SiC N-Channel MOSFET

FEATURES ·Optimized Package with Separate Driver Source Pin ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances APPLICATIONS ·Switch Mode Power Supplies ·EV Battery Charges ·Solar Inverters ·High Voltage DC/DC Converters

文件：328.7 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：TO247-4；Package：C3M0030090K；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.06692 Mbytes 页数：11 Pages

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