丝印：C3M0040120K1；Package：TO-247-4L-LP；Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits •

文件：1.07762 Mbytes 页数：13 Pages

WOLFSPEED

丝印：TO-247-3；Package：C3M0045065D；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件：960.72 Kbytes 页数：11 Pages

WOLFSPEED

丝印：TO-263-7LXL；Package：C3M0045065J1；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • R

文件：1.02168 Mbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0045065K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.08343 Mbytes 页数：12 Pages

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SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·UPS ·SMPS ·Motor drives

文件：361.56 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • R

文件：976.1 Kbytes 页数：13 Pages

WOLFSPEED

丝印：C3M0060065D；Package：TO-247-3；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件：1.07657 Mbytes 页数：11 Pages

WOLFSPEED

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：437.34 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：C3M0060065J；Package：TO-263-7；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • Low inductance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qr

文件：1.22367 Mbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0060065K；Package：TO-247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件：1.291 Mbytes 页数：12 Pages

WOLFSPEED