isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID=97A@ TC=25℃ Drain Source Voltage -VDSS=650V(Min) Static Drain-Source On-Resistance -RDS(on) = 34mΩ(Max)@VGS= 15V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：412.67 Kbytes 页数：3 Pages

ISC

无锡固电

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：361.55 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits •

文件：1.09545 Mbytes 页数：13 Pages

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SiC N-Channel MOSFET

FEATURES ·Optimized Package with Separate Driver Source Pin ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances APPLICATIONS ·Switch Mode Power Supplies ·EV Battery Charges ·Solar Inverters ·High Voltage DC/DC Converters

文件：328.7 Kbytes 页数：3 Pages

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无锡固电

丝印：TO247-4；Package：C3M0030090K；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.06692 Mbytes 页数：11 Pages

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Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • Larger drain tab for better thermal performance • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (

文件：1.24533 Mbytes 页数：13 Pages

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SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 43mΩ（TYP.）@VGS=15V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：785.94 Kbytes 页数：8 Pages

ISC

无锡固电

Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Typical Appl

文件：1.12647 Mbytes 页数：13 Pages

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SiC N-Channel MOSFET

FEATURES ·High blocking voltage with low on-resistance ·High-speed switching with low capacitances ·Fast intrinsic diode with low reverse recovery APPLICATIONS ·Solar inverters ·High voltage DC/DC converters ·Switched mode power supplies ·Motor drives

文件：416.16 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：TO-247-3；Package：C3M0045065D；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件：960.72 Kbytes 页数：11 Pages

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