Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Typical App

文件：898.5 Kbytes 页数：13 Pages

WOLFSPEED

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) be

文件：986.22 Kbytes 页数：10 Pages

WOLFSPEED

Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) be

文件：1.04763 Mbytes 页数：10 Pages

WOLFSPEED

SiC N-Channel MOSFET

FEATURES ·High blocking voltage with low on-resistance ·High-speed switching with low capacitances ·Fast intrinsic diode with low reverse recovery APPLICATIONS ·UPS ·High voltage DC/DC converters ·Switched mode power supplies ·Renewable energy

文件：376.52 Kbytes 页数：2 Pages

ISC

无锡固电

1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • High blocking voltage with low on-resistance • High-speed switching with low capacitances • 12V..18V / 0V VGS compatible with most flyback controllers • Ultra-low drain-gate capacitance • Qualified to operate under high humidity and high temperature environmental conditions • Hal

文件：1.10312 Mbytes 页数：13 Pages

WOLFSPEED

丝印：TO247-3；Package：C3M0040120D；Silicon Carbide Power MOSFET

文件：858.99 Kbytes 页数：11 Pages

Cree

科锐

丝印：TO-247-3；Package：C3M0045065D；Silicon Carbide Power MOSFET

文件：961.61 Kbytes 页数：11 Pages

Cree

科锐

丝印：TO247-4；Package：TO247-4；Silicon Carbide Power MOSFET

文件：1.08429 Mbytes 页数：12 Pages

Cree

科锐

Silicon Carbide Power MOSFET

文件：1.10987 Mbytes 页数：11 Pages

Cree

科锐

Silicon Carbide Power MOSFET

文件：1.2917 Mbytes 页数：12 Pages

Cree

科锐