650 V Discrete Silicon Carbide MOSFETs

Low On-State Resistance over TemperatureLow Parasitic CapacitancesFast Diode with ultra low reverse recoveryHigh Temperature Operation (TJ = 175°C)Kelvin Source PinIndustry Standard Through-Hole & SMT Packages • Low On-State Resistance over Temperature\n• Low Parasitic Capacitances\n• Fast Diode with ultra low reverse recovery\n• High Temperature Operation (TJ = 175°C)\n• Kelvin Source Pin\n• Industry Standard Through-Hole & SMT Packages;

Wolfspeed(CREE)

SiC MOS

ChipNobo

无边界

包装：盒 类别：电源 - 外部/内部（板外） AC DC 可配置电源模块 描述：CONFIG DC PWR MOD 3000W

ADVANCEDENERGY

先进能源工业

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：SIC, MOSFET, 45M, 650V, TOLL, IN

WOLFSPEED