TO-247-3

型号：C3M0045065D；Package：C3M0045065D；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features •3rdGenerationSiCMOSFETtechnology •Highblockingvoltagewithlowon-resistance •Highspeedswitchingwithlowcapacitances •Fastintrinsicdiodewithlowreverserecovery(Qrr) •Halogenfree,RoHScompliant Benefits •Highersystemefficiency •Reducedcoolingrequiremen

TO-247-3

型号：C3M0045065D；Package：C3M0045065D；Silicon Carbide Power MOSFET

TO-247-3L

型号：NCE40TD120VT；Package：NCE40TD120VT；1200V, 40A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the1200VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyOffering VerylowVCE(sat)

TO-247-3L

型号：NCE40TD65BT；Package：NCE40TD65BT；650V, 40A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the650VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering VerylowVCE(sat)

TO-247-3L

型号：NCE50ED65VT；Package：NCE50ED65VT；650V 50A Trench FS Gen.7 IGBT

GeneralDescription UsingNCE'sproprietaryhighdensitytrenchgatedesignandadvancedFS (FieldStop)Gen.7technology,the650VTrenchFSGen.7IGBTofferssuperior conductionandswitchingperformances,andeasyparalleloperation; Features TrenchFieldStopGen.7TechnologyOffering