丝印：TO-247-3；Package：C3M0045065D；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件：960.72 Kbytes 页数：11 Pages

WOLFSPEED

丝印：TO-247-3；Package：C3M0045065D；Silicon Carbide Power MOSFET

文件：961.61 Kbytes 页数：11 Pages

Cree

科锐

丝印：TO-247-3L；Package：NCE40TD120VT；1200V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：2.58785 Mbytes 页数：15 Pages

NCEPOWER

新洁能

丝印：TO-247-3L；Package：NCE40TD65BT；650V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：2.0042 Mbytes 页数：11 Pages

NCEPOWER

新洁能

丝印：TO-247-3L；Package：NCE50ED65VT；650V 50A Trench FS Gen.7 IGBT

General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench Field Stop Gen.7 Technology Offering

文件：1.19957 Mbytes 页数：9 Pages

NCEPOWER

新洁能