isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -22A@ TC=25℃ ·Drain Source Voltage : VDSS= -50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor driv

文件：325.56 Kbytes 页数：2 Pages

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SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated

文件：129.06 Kbytes 页数：9 Pages

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SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

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Precision Voltage Comparators

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