isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -22A@ TC=25℃ ·Drain Source Voltage : VDSS= -50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor driv

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ISC

无锡固电

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated

文件：129.06 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

Infineon

英飞凌

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC

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MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

文件：24.87 Kbytes 页数：2 Pages

NTE

PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS

DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption appl

文件：168.58 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体