SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：88.67 Kbytes 页数：8 Pages

INFINEON

英飞凌

POWER MOS TRANSISTORS

FEATURE • Nchannel • Enhancement mode • Avalanche-rated • TO-220 envelope • Compliance to RoHS.

文件：106.64 Kbytes 页数：3 Pages

COMSET

High current capability

DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) • High current capability • 175℃ operating temperature APPLICATIONS • High current , high speed switching • Solenoid and relay drivers • DC-DC & DC-AC converters

文件：66.02 Kbytes 页数：2 Pages

ISC

无锡固电

Enhancement mode

SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：104.54 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：197.3 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode)

SIPMOS ® Power Transistor • N channel • Enhancement mode

文件：240.01 Kbytes 页数：9 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：333.1 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：332.88 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode)

• N channel • Enhancement mode

文件：240.11 Kbytes 页数：9 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：347.82 Kbytes 页数：2 Pages

ISC

无锡固电