isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：332.88 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode)

• N channel • Enhancement mode

文件：240.11 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode)

Infineon

英飞凌

MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE

文件：696.77 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MOLOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE

FEATURES • 16 or 24 pin ceramic dip • Minimum of external components required • Easily adjusts for yoke errors • Accuracy better than 0.5 Max(C312) • Bandwidth compatible with 10MHz systems • Both geometry and focus available

文件：646.58 Kbytes 页数：4 Pages

INTRONICS

MAGNETICS FOR RF, POWER,FILTER AND DATA APPLICATIONS

文件：8.35916 Mbytes 页数：60 Pages

COILCRAFT