4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This t

文件：41.6 Kbytes 页数：5 Pages

INTERSIL

4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This t

文件：45.09 Kbytes 页数：5 Pages

HARRIS

SOA is Power Dissipation Limited

DESCRIPTION • 4.5A, 500V • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device APPLICATIONS • This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applicat

文件：66.43 Kbytes 页数：2 Pages

ISC

无锡固电

Enhancement mode

Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：105.05 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：177.21 Kbytes 页数：9 Pages

SIEMENS

西门子

4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET

Renesas

瑞萨

Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220AB

NJS

新泽西半导体

Transistor

Comset