isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：348.53 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

• N channel • Enhancement mode • Avalanche-rated

文件：68.26 Kbytes 页数：8 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飞凌

DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS

Dual Low Power Operational Amplifiers Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE, 3) single supply or split supply operation

文件：160.38 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

Low Power Dual Operational Amplifiers

文件：1.0094 Mbytes 页数：25 Pages

NSC

国半

DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS

Dual Low Power Operational Amplifiers Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE, 3) single supply or split supply operation

文件：160.38 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉