isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：348.53 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

• N channel • Enhancement mode • Avalanche-rated

文件：68.26 Kbytes 页数：8 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飞凌

Damper-Modulator fast, high-voltage

GENERAL DESCRIPTION Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in PC monitors. The BYM358DX contains diodes with performance characteristics designed specifically for applications from 32kHz to 120kHz The BYM358DX series is supplied in the con

文件：54.11 Kbytes 页数：7 Pages

PHI

PHI

Damper-Modulator fast, high-voltage

GENERAL DESCRIPTION Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in PC monitors. The BYM358X contains diodes with performance characteristics designed specifically for applications from 32kHz to 120kHz The BYM358X series is supplied in the conven

文件：50.45 Kbytes 页数：7 Pages

PHI

PHI

LOW POWER DUAL OPERATIONAL AMPLIFIERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：74.77 Kbytes 页数：12 Pages

NEC

瑞萨