HIGH VOLTAGE POWER MOSFET N-CHANNEL

[SEMICONDUCTOR TECHNOLOGY, INC.]

文件：25.74 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：332.74 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode)

• N channel • Enhancement mode

文件：207.83 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode)

• N channel • Enhancement mode

文件：199.04 Kbytes 页数：9 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：333.22 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：333.64 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode)

• N channel • Enhancement mode

文件：203.84 Kbytes 页数：9 Pages

SIEMENS

西门子

Enhancement mode

文件：103.2 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Enhancement mode

文件：102.48 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SIPMOS® Power Transistor

• N channel\n• Enhancement mode

Infineon

英飞凌