Drain source voltage

FAST POWER MOS TRANSISTOR

文件：88.22 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SIPMOS Power Transistor (N channel Enhancement mode)

SIPMOS ® Power Transistor • N channel • Enhancement mode

文件：176.56 Kbytes 页数：9 Pages

SIEMENS

西门子

N-Channel Enhancement Mode Power MOS Transistor

N-Channel Enhancement Mode Power MOS Transistor ● Typical RDS(on)=2.5 Ω ● AVALANCHE RUGGED TECHNOLOGY ● 100 AVALANCHE TESTED ● REPETITIVE AVALANCHE DATA AT 100℃ ● LOW INPUT CAPACITANCE ● LOW GATE CHARGE ● APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ● HIGH CURRENT, HIGH SPEED SWITCH

文件：196.66 Kbytes 页数：4 Pages

ARTSCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：333.58 Kbytes 页数：2 Pages

ISC

无锡固电

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：324.27 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Power MOS Transistor

N-Channel Enhancement Mode Power MOS Transistor ● Typical RDS(on)=2.5 Ω ● AVALANCHE RUGGED TECHNOLOGY ● 100 AVALANCHE TESTED ● REPETITIVE AVALANCHE DATA AT 100℃ ● LOW INPUT CAPACITANCE ● LOW GATE CHARGE ● APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ● HIGH CURRENT, HIGH SPEED SWITCH

文件：196.66 Kbytes 页数：4 Pages

ARTSCHIP

SIPMOS Power Transistor (N channel Enhancement mode)

Infineon

英飞凌