isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=8A@ TC=25℃ · Drain Source Voltage -VDSS=200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

BUZ901P - 晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V

The BUZ901P is a 200V N-channel Enhancement Mode Power MOSFET with high speed switching and integral protection diode designed for use in audio applications. ·High energy rating\n·50ns Turn-off time\n·100ns Turn-on time;

TT Electronics

17 dB 40-860 MHz VHF/UHF CATV/MATV AMPLIFIERS

The RF Line VHF/UHF CATV Amplifiers . . . designed for broadband applications requiring low–distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion–implanted arsenic emitter transistors and an all gold metal system. • Specified C

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MOTOROLA

摩托罗拉

5.0 mm Blue Series

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PANASONIC

松下

HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON

Description The device is a high voltage NPN transistor in monolithic special Darlington configuration designed for applications such as electronic ignition for small engines (scooters, lawnmowers, chainsaws). Features ■ High voltage special Darlington structure ■ Very rugged bipolar technolog

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STMICROELECTRONICS

意法半导体