N-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905 &

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ETCList of Unclassifed Manufacturers

未分类制造商

N-CHANNEL POWER MOSFET

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-channel power mosfet

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ELEFLOW

BUZ901 - 晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V

The BUZ901 is a 200V N-channel Power MOSFET for audio applications. It features integral protection diode and enhancement mode. ·High speed switching\n·Semefab designed and diffused\n·High voltage\n·High energy rating\n·±14V Gate to source voltage\n·8A Body drain diode current\n·1°C/W Thermal resistance, junction to case;

TT Electronics

N-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905DP &am

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=8A@ TC=25℃ · Drain Source Voltage -VDSS=200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

BUZ901P - 晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V

The BUZ901P is a 200V N-channel Enhancement Mode Power MOSFET with high speed switching and integral protection diode designed for use in audio applications. ·High energy rating\n·50ns Turn-off time\n·100ns Turn-on time;

TT Electronics