P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS

[MAGNATEC] POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900DP & B

文件：40 Kbytes 页数：4 Pages

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isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -16A@ TC=25℃ · Drain Source Voltage -VDSS= -160V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：303.33 Kbytes 页数：2 Pages

ISC

无锡固电

BUZ905D - 晶体管, MOSFET, P沟道, 16 A, -160 V, 750 mohm, -1.5 V

The BUZ905D is a P-channel enhancement-mode Power MOSFET offers -160V drain source voltage and -16A continuous drain current. ·High speed switching\n·Semefab designed and diffused\n·High voltage\n·High energy rating\n·Integral protection diode\n·BUZ900D complimentary P-channel\n·Double die package for maximum power and heat-sink space;

TT Electronics

P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900P &

文件：43.57 Kbytes 页数：3 Pages

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Sample More Signals, Faster and Dynamically

Key Features • 3-slot mainframes with built-in 6 ½ digit DMM • Basic 0.003 DCV accuracy • 9 switch, RF and control plug-in modules, including a new 4-channel simultaneous sampling digitizer • Up to 450 channel/s scan rate • Up to 120 channels per system • Up to one million points scanning m

文件：397.45 Kbytes 页数：2 Pages

KEYSIGHT

是德科技

6-WAY POWER DIVIDER SURFACE MOUNT MODEL

文件：334.01 Kbytes 页数：4 Pages

SYNERGY