BUZ906 - 晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V

The BUZ906 is a -200V P-channel Enhancement Mode Power MOSFET with high speed switching and integral protection diode designed for use in audio applications. ·High energy rating\n·60ns Turn-off time\n·120ns Turn-on time;

TT Electronics

P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.

Magnatec

P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS

[MAGNATEC] POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900DP & B

文件：40 Kbytes 页数：4 Pages

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isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -8A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：322.38 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900P &

文件：43.57 Kbytes 页数：3 Pages

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NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900 &

文件：33.79 Kbytes 页数：2 Pages

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P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS

Magnatec