isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：332.08 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

• N channel • Enhancement mode • Avalanche-rated

文件：177.45 Kbytes 页数：9 Pages

SIEMENS

西门子