9A, 100V, 0.250 Ohm, N-Channel Power MOSFET

9A, 100V, 0.250 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors req

文件：45.43 Kbytes 页数：6 Pages

INTERSIL

Enhancement mode

Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：98.36 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：193.62 Kbytes 页数：9 Pages

SIEMENS

西门子

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS

文件：112.45 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：90.72 Kbytes 页数：8 Pages

INFINEON

英飞凌

SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

文件：87.13 Kbytes 页数：8 Pages

INFINEON

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level

文件：187.23 Kbytes 页数：9 Pages

SIEMENS

西门子

9A, 100V, 0.250 Ohm, N-Channel Power MOSFET

9A, 100V, 0.250 Ohm, N-Channel Power MOSFETThis is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring h • 9A, 100V\n• rDS(ON) = 0.250Ω\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Majority Carrier Device\n• Related Literature\n  -TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” ;

Renesas

瑞萨

Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB

NJS

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飞凌