9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET

IThis is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This

文件：12.11 Kbytes 页数：1 Pages

INTERSIL

SOA is Power Dissipation Limited

DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) • SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching t

文件：47.51 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement-Mode Power Field-Effect Transistors

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and DC/AC converters, and in general purpose switching applications.

文件：98.54 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This

文件：12.13 Kbytes 页数：1 Pages

INTERSIL

SOA is Power Dissipation Limited

DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) • SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching t

文件：47.52 Kbytes 页数：2 Pages

ISC

无锡固电

SOA is Power Dissipation Limited

DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) • SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching t

文件：47.51 Kbytes 页数：2 Pages

ISC

无锡固电

10A, 500V, 0.500 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This

文件：42.44 Kbytes 页数：5 Pages

INTERSIL

9.6A/ 500V/ 0.600 Ohm/ N-Channel Power MOSFET

Renesas

瑞萨

Trans MOSFET N-CH 500V 9.6A

NJS

新泽西半导体

10A/ 500V/ 0.500 Ohm/ N-Channel Power MOSFET

Renesas

瑞萨