isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：347.42 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：212.2 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飞凌

Precision Voltage-to-Frequency Converters

文件：368.44 Kbytes 页数：15 Pages

NSC

国半

Precision Voltage-to-Frequency Converters

文件：280 Kbytes 页数：16 Pages

NSC

国半

Precision Voltage-to-Frequency Converters

文件：368.44 Kbytes 页数：15 Pages

NSC

国半