SOA is Power Dissipation Limited

DESCRIPTION • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) • SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring

文件：47.45 Kbytes 页数：2 Pages

ISC

无锡固电

main ratings

Description SIPMOS, N-channel, enhancement mode

文件：174.81 Kbytes 页数：6 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：347.78 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：98.1 Kbytes 页数：8 Pages

INFINEON

英飞凌

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：241.61 Kbytes 页数：9 Pages

SIEMENS

西门子

11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET

11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching tran

文件：10.38 Kbytes 页数：1 Pages

INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：347.61 Kbytes 页数：2 Pages

ISC

无锡固电

main ratings

11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET

文件：177.6 Kbytes 页数：6 Pages

SIEMENS

西门子

main ratings

SIPMOS Power Transistor (N channel Enhancement mode)

文件：181.11 Kbytes 页数：6 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：348.78 Kbytes 页数：2 Pages

ISC

无锡固电