isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：347.72 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor(N Channel)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：154.25 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Power Transistor(N Channel)

Infineon

英飞凌

SIPMOS Power Transistor(N Channel)

• N channel • Enhancement mode • Avalanche-rated

文件：215.32 Kbytes 页数：9 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：348.15 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor(N Channel)

Infineon

英飞凌