isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：348.06 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：224.92 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飞凌

5-Amp Adjustable Regulators

文件：396.27 Kbytes 页数：16 Pages

NSC

国半

5-Amp Adjustable Regulators

文件：396.27 Kbytes 页数：16 Pages

NSC

国半

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50 (Min) • Buil

文件：132.02 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉