isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

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ISC

无锡固电

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：211.63 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飞凌

Operational Amplifiers

文件：200.55 Kbytes 页数：6 Pages

NSC

国半

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

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NTE

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

文件：72.36 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体