BSC190N10NSG规格书供应代理華瑞CET-MOS-114ic电子网

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEB190N10	文件：532.8 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,190A,RDS(ON)=3.7mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. Applications Batteryprotection,UPS.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP190N10	文件：532.8 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,190A,RDS(ON)=3.7mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. Applications Batteryprotection,UPS.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
RU190N10Q	文件：484.13 Kbytes Page：11 Pages	N-ChannelAdvancedPowerMOSFET	RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司	RUICHIPS
RU190N10R	文件：484.13 Kbytes Page：11 Pages	N-ChannelAdvancedPowerMOSFET	RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司	RUICHIPS
RU190N10S	文件：484.13 Kbytes Page：11 Pages	N-ChannelAdvancedPowerMOSFET	RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司	RUICHIPS

更多BSC190N10NSG供应商更新时间2024-9-24 11:00:00