2SB1188

Marking：BCP；Package：SOT-89；Medium power transistor(-32V,-2A)

FEATURES LowVCE(SAT)=-0.5V(Typ.) (IC/IB=-2A/-0.2A). Complementarythe2SD1766. APPLICATIONS Epitaxialplanartype. PNPsilicontransistor.

2SB1188

Marking：BCP；Package：SOT-89-3L；Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●LowVCE(sat). ●Complementsthe2SD1766

TL431BCPG

Marking：BCP；Package：PDIP-8；Programmable Precision References

TheTL431A,Bintegratedcircuitsarethree−terminalprogrammableshuntregulatordiodes.ThesemonolithicICvoltagereferencesoperateasalowtemperaturecoefficientzenerwhichisprogrammablefromVrefto36Vwithtwoexternalresistors.Thesedevicesexhibitawideoperatingcurrentrange

TL431BCPG

Marking：BCP；Package：PDIP-8；Programmable Precision References

TheTL431A,Bintegratedcircuitsarethree−terminal programmableshuntregulatordiodes.ThesemonolithicICvoltage referencesoperateasalowtemperaturecoefficientzenerwhichis programmablefromVrefto36Vwithtwoexternalresistors.These devicesexhibitawideoperatingcurrentra

BFQ591

Marking：BCp；Package：SOT-89；NPN 7 GHz wideband transistor

BFQ591

Marking：BCp；Package：SOT-89；NPN 7 GHz wideband transistor

2SB1188-P

Marking：BCP*；Package：SOT-89；PNP Transistors

Features ●LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A)

BCP51-16

Marking：BCP51-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features ®HighCollectorCurrent ®LowCollector-emitterSaturationVoltage

BCP51T

Marking：BCP51T；Package：SC-73；45 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

BCP52

Marking：BCP52；Package：SC-73；60 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified