BCP53

型号：BCP53；Package：SC-73；80 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP53

型号：KCP5-16；Package：SOT-223；PNP Medium Power Transistors

BCP53/10

型号：BCP53-10；Package：SC-73；80 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP53/16

型号：BCP53-16；Package：SC-73；80 V, 1 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCP53-16

型号：BCP53-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features HighCollectorCurrent LowCollector-emitterSaturationVoltage

BCP5316

型号：BCP5316QTA；Package：SOT223；80V PNP MEDIUM POWER TRANSISTOR IN SOT223

Features BVCEO>-80V IC=-1AHighContinuousCollectorCurrent ICM=-2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(sat)

BCP53H

型号：BCP53H；Package：SC-73；80 V, 1 A PNP medium power transistors

Generaldescription PNPmediumpowertransistorsinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■HighcollectorcurrentcapabilityICandICM ■Threecurrentgainselections ■Highpowerdissipationcapability ■High-temperatureapplicat

BCP53H

型号：BCP53H；Package：SC-73；80 V, 1 A PNP medium power transistors

Featuresandbenefits HighcollectorcurrentcapabilityICandICM Threecurrentgainselections Highpowerdissipationcapability High-temperatureapplicationsupto175C AEC-Q101qualified

BCP53H

型号：BCP53H-Q；Package：SOT223；80 V, 1 A PNP medium power transistors

1.Generaldescription PNPmediumpowertransistorsinaSOT223(SC-73)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •High-temperatureapplications

BCP53T

型号：BCP53T；Package：SC-73；80 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified