丝印：BCP53H；Package：SOT223；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • High-temperature applications

文件：275.29 Kbytes 页数：14 Pages

NEXPERIA

安世

80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • High-temperature applications

文件：275.29 Kbytes 页数：14 Pages

NEXPERIA

安世

80 V, 1 A PNP medium power transistors

PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• High-temperature applications up to 175 °C\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

NEXPERIA
SOT223

NEXPERIA

安世

上传：深圳市得捷芯城科技有限公司

Slkor(萨科微
SOT-223

Slkor(萨科微

上传：深圳市华康联电子科技有限公司