丝印：BCP53-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.31226 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：BCP53-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.31303 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：BCP53-16；Package：SOT223；PNP Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.31226 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：BCP53/16；Package：SC-73；80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.83457 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：9110DW；Package：SOT-223；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN com

文件：396 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：P5310H；Package：SC-73；80 V, 1 A PNP medium power transistors

General description PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High collector current capability IC and ICM ■ Three current gain selections ■ High power dissipation capability ■ High-temperature applicat

文件：1.27242 Mbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：P5316H；Package：SOT223；80 V, 1 A PNP medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

文件：1.27175 Mbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：P5316H；Package：SOT223；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • High-temperature applications

文件：275.29 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：P5316T；Package：SOT223；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：274 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：P5316T；Package：SOT223；80 V, 1 A PNP medium power transistors

文件：274.63 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司